Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer

Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer

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The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material.In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built Mountaineering - Accessoires - Fixations in potential due to the diffusion activity of electrons and holes.The magnitude of the electrostatic potential is obtained by solving the Poisson and Continuity equations, which are applied to a-Si: H based materials.The difference in Food Mixers built in potential at the p-i and i-n junctions is obtained as a function of the energy gap of the intrinsic layer.